International Organization for Standardization (ISO)
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ISO/TTA 4:2002
Scope
1.1 A standard procedure for the three-omega method is proposed for measuring the thermal conductivity of
a thin, electrically insulating film, on a substrate having a thermal conductivity significantly greater than the
thermal conductivity of the film. This method is applicable to a film on a silicon substrate with the following
characteristics:
a) the film is electrically insulating;
b) the film has a thermal conductivity that is less than one tenth the thermal conductivity of silicon;
c) the film is uniform in thickness and the thickness lies in the range 0,25 μm to 1 μm;
d) the maximum dimensions of the film are limited by the sizes of the preparation and measurement
apparatus;
e) the minimum dimensions of the film are limited by the minimum size of the circuit element that can be
placed on the film surface.
NOTE A specimen approximately 15 mm by 25 mm is of an appropriate size although specimens as small as
10 mm × 10 mm are usable.
1.2 The method is directly applicable to films of silicon dioxide on silicon wafer substrates.
1.3 The method may be applicable to insulating films on other high-thermal conductivity substrates provided
that the parameters of the substrate material are substituted for the parameters of silicon used in this method
and the associated computer program.
1.4 The method is applicable to measurements near room temperature.
ISO/TTA 4:2002 history
2002ISO/TTA 4:2002 Measurement of thermal conductivity of thin films on silicon substrates