BS ISO 17560:2002
Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of boron in silicon

Standard No.

BS ISO 17560:2002

Release Date

2002

Published By

British Standards Institution (BSI)

Status

Be replaced 2014-09

Replace By

BS ISO 17560:2014

Latest

BS ISO 17560:2014

Replace

99/124265 DC:1999

Scope

This International Standard specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal or amorphous-silicon specimens with boron atomic concentrations between 1 × 10 atoms/cm and 1×10 atoms/cm, and to crater depths of 50 nm or deeper.

BS ISO 17560:2002 history

• 2014 BS ISO 17560:2014 Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of boron in silicon
• 2002 BS ISO 17560:2002 Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of boron in silicon