ISO 17560:2002
Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of boron in silicon
- Standard No.
- ISO 17560:2002
- Release Date
- 2002
- Published By
- International Organization for Standardization (ISO)
- Status
- Replace By
- ISO 17560:2014
- Latest
- ISO 17560:2014
- Scope
- This International Standard specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration. This method is applicable to single-crystal, poly-crystal or amorphous-silicon specimens with boron atomic concentrations between 1 × 10
atoms/cm and 1×10 atoms/cm , and to crater depths of 50 nm or deeper.
ISO 17560:2002 history
- 2014 ISO 17560:2014 Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon
- 2002 ISO 17560:2002 Surface chemical analysis - Secondary-ion mass spectrometry - Method for depth profiling of boron in silicon
