This blank detailed specification sets out the basic principles for developing detailed specifications for microwave low-noise single-gate field-effect transistors. All detail specifications within this scope shall be developed consistent with this blank detail specification. This blank detailed specification refers to the International Electrotechnical Commission (IEC) TC47(CO)958 document, which is one of a series of blank detailed specifications related to GB 4936.1-85 "General Specification for Semiconductor Discrete Devices".