This standard applies to the measurement of gallium arsenide epitaxial layer thickness, and the measured thickness is greater than 2 μm. It is required that the electronegativity of the substrate material is less than 0.02Ω•cm, and the electronegativity of the epitaxial layer is greater than 0.1Ω•cm.
GB/T 8758-2006 history
2006GB/T 8758-2006 Measuring thickness of epitaxial layers of gallium arsenide by infrared interference
1988GB/T 8758-1988 Measuring thickness of epitaxial layers of gallium arsenide by infrared interference