GB/T 8757-2006
Determination of carrier concentration in gallium arsenide by the plasma resonance minimum (English Version)

Standard No.

GB/T 8757-2006

Language

Chinese, Available in English version

Release Date

2006

Published By

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China

Latest

GB/T 8757-2006

Replace

GB/T 8757-1988

Scope

This standard applies to the measurement of carrier concentration in doped gallium single crystal. Measuring range: n-GaAs 1.0*10¹⁷cm^-3～1.0*10¹⁹cm^-3 p-GaAs 2.0*10¹⁸cm< Superscript-3>～1.0*10²⁰cm^-3

GB/T 8757-2006 history

• 2006 GB/T 8757-2006 Determination of carrier concentration in gallium arsenide by the plasma resonance minimum
• 1988 GB/T 8757-1988 Determination of carrier concentration in gallium arsenide by the plasma resonance minimum