GB/T 20176-2006
Surface chemical analysis.Secondary-ion mass spectrometry.Determination of boron atomic concentration in silicon using uniformly doped materials (English Version)

Standard No.

GB/T 20176-2006

Language

Chinese, Available in English version

Release Date

2006

Published By

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China

Latest

GB/T 20176-2006

Scope

This standard specifies the secondary ion mass spectrometry method for determining the atomic concentration of boron in single crystal silicon using a calibrated homogeneous dopant (calibrated with a boron-implanted reference substance). It is suitable for uniform boron doping concentration ranging from 1×10¹⁶atoms/cm³ to 1×10²⁰atoms/cm³.

GB/T 20176-2006 Referenced Document

• ISO 5725-2:1994 Accuracy (trueness and precision) of measurement methods and results - Part 2: Basic method for the determination of repeatability and reproducibility of a standard measurement method

GB/T 20176-2006 history

• 2006 GB/T 20176-2006 Surface chemical analysis.Secondary-ion mass spectrometry.Determination of boron atomic concentration in silicon using uniformly doped materials