JIS K 0143:2000 Surface chemical analysis -- Secondary ion mass spectrometry -- Determination of boron atomic concentration in silicon using uniformly doped materials
This standard specifies a secondary ion mass spectrometry method for determining the atomic concentration of boron in single-crystal silicon using a uniformly doped sample calibrated with a certified standard sample prepared by implanting boron. This method is used to determine the concentration of uniformly added boron in the concentration range from 1 x 10 atoms/cm to 1 x 10 atoms/cm.
JIS K 0143:2000 history
2023JIS K 0143:2023 Surface chemical analysis -- Secondary-ion mass spectrometry -- Determination of boron atomic concentration in silicon using uniformly doped materials
2000JIS K 0143:2000 Surface chemical analysis -- Secondary ion mass spectrometry -- Determination of boron atomic concentration in silicon using uniformly doped materials