JIS H 0609:1999
Test methods of crystalline defects in silicon by preferential etch techniques

Standard No.

JIS H 0609:1999

Release Date

1999

Published By

Japanese Industrial Standards Committee (JISC)

Latest

JIS H 0609:1999

Replace

JIS H 0609:1994

Scope

This standard specifies a method for detecting and determining bond defects in silicon wafers using a selective etching solution that does not contain hexavalent chromium. The targets are single crystal wafers, epitaxial wafers, and their thermally oxidized wafers, and their crystal plane orientations are of three types: {100} plane, {llll} plane, and {5ll} plane.

JIS H 0609:1999 history

• 1999 JIS H 0609:1999 Test methods of crystalline defects in silicon by preferential etch techniques
• 1994 JIS H 0609:1994 Test methods of crystalline defects in silicon by preferential etch techniques