This standard specifies the method for determining the resistivity of silicon single crystals (hereinafter referred to as single crystals) and silicon wafers (hereinafter referred to as wafers) using the DC four-probe method. The measurable resistivity range is 0.001 to 2000 Ω·cm for P type and 0.001 to 6000 Ω·cm for N type.
JIS H 0602:1995 history
1995JIS H 0602:1995 Testing method of resistivity for silicon crystals and silicon wafers with four-point probe