DIN 50434:1986 Testing of materials for semiconductor technology; detection of crystal defects in monocrystalline silicon using etching techniques on {111} and {100} surfaces
This standard defines a method for the determination of the crystallographic perfection of mono-crystalline silicon by etch techniques on {111}- and {100}-surfaces. It is applicable to n-type or p-typed doped silicium with specific resistance down to 0,005cm and to dislocation densities within 100 and 100000 cm<(hoch)-2>.#,,#
DIN 50434:1986 history
1986DIN 50434:1986 Testing of materials for semiconductor technology; detection of crystal defects in monocrystalline silicon using etching techniques on {111} and {100} surfaces