DIN 50434:1986
Testing of materials for semiconductor technology; detection of crystal defects in monocrystalline silicon using etching techniques on {111} and {100} surfaces

Standard No.
DIN 50434:1986
Release Date
1986
Published By
German Institute for Standardization
Status
Latest
DIN 50434:1986
Scope
This standard defines a method for the determination of the crystallographic perfection of mono-crystalline silicon by etch techniques on {111}- and {100}-surfaces. It is applicable to n-type or p-typed doped silicium with specific resistance down to 0,005cm and to dislocation densities within 100 and 100000 cm<(hoch)-2>.#,,#

DIN 50434:1986 history

  • 1986 DIN 50434:1986 Testing of materials for semiconductor technology; detection of crystal defects in monocrystalline silicon using etching techniques on {111} and {100} surfaces
Testing of materials for semiconductor technology; detection of crystal defects in monocrystalline silicon using etching techniques on {111} and {100} surfaces



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