BS IEC 63275-1:2022
Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Test method for bias temperature instability

Standard No.

BS IEC 63275-1:2022

Release Date

2022

Published By

British Standards Institution (BSI)

Latest

BS IEC 63275-1:2022

Scope

1   Scope This part of IEC 63275 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 10 h).

BS IEC 63275-1:2022 history

• 2022 BS IEC 63275-1:2022 Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Test method for bias temperature instability