GB/T 41153-2021
Determination of boron, aluminum and nitrogen impurity content in silicon carbide single crystal—Secondary ion mass spectrometry (English Version)
- Standard No.
- GB/T 41153-2021
- Language
- Chinese, Available in English version
- Release Date
- 2021
- Published By
- 国家市场监督管理总局、中国国家标准化管理委员会
- Latest
- GB/T 41153-2021
- Scope
- This document specifies the secondary ion mass spectrometry test method for boron, aluminum and nitrogen impurity content in silicon carbide single crystal. This document is applicable to the quantitative analysis of boron, aluminum and nitrogen impurity content in silicon carbide single crystal. 1015cm-3, the element concentration (atomic percentage) is not more than 1%. Note 1: The content of the element to be measured in the silicon carbide single crystal is calculated by the number of atoms per cubic centimeter. Note 2: The determination of vanadium impurity content in silicon carbide single crystal can refer to this document, and the determination range is that the vanadium content is not less than 1×1013 cm-3.
GB/T 41153-2021 Referenced Document
- GB/T 14264 Semiconductor materials-Terms and definitions
- GB/T 22461 Surface chemical analysis.Vocabulary
- GB/T 32267 Terminology of performance testing for analytical instrument
GB/T 41153-2021 history
- 2021 GB/T 41153-2021 Determination of boron, aluminum and nitrogen impurity content in silicon carbide single crystal—Secondary ion mass spectrometry
