GB/T 43493.2-2023
Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices of semiconductor devices Part 2: Optical detection method of defects (English Version)

Standard No.
GB/T 43493.2-2023
Language
Chinese, Available in English version
Release Date
2023
Published By
General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
Latest
GB/T 43493.2-2023

GB/T 43493.2-2023 history

  • 2023 GB/T 43493.2-2023 Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices of semiconductor devices Part 2: Optical detection method of defects

GB/T 43493.2-2023 -All Parts

GB/T 43493.1-2023 Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices of semiconductor devices Part 1: Defect classification GB/T 43493.2-2023 Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices of semiconductor devices Part 2: Optical detection method of defects GB/T 43493.3-2023 Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices of semiconductor devices Part 3: Photoluminescence detection method of defects


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