1 Scope
This part of IEC 60749
establishes the procedure for testing, evaluating, and classifying devices and microcircuits
according to their susceptibility (sensitivity) to damage or degradation by exposure
to a defined field-induced charged device model (CDM) electrostatic discharge (ESD).
All packaged semiconductor devices, thin film circuits, surface acoustic wave (SAW)
devices, opto-electronic devices, hybrid integrated circuits (HICs), and multi-chip
modules (MCMs) containing any of these devices are to be evaluated according to this
document. To perform the tests, the devices are assembled into a package similar to
that expected in the final application. This CDM document does not apply to socketed
discharge model testers. This document describes the field-induced (FI) method. An
alternative, the direct contact (DC) method, is described in Annex J.
The purpose of this document is to establish a test method that will replicate CDM
failures and provide reliable, repeatable CDM ESD test results from tester to tester, regardless of device type. Repeatable data will
allow accurate classifications and comparisons of CDM ESD sensitivity levels.
BS EN IEC 60749-28:2022 history
2022BS EN IEC 60749-28:2022 Semiconductor devices. Mechanical and climatic test methods. Electrostatic discharge (ESD) sensitivity testing. Charged device model (CDM). device level