This document contains the product classification, working conditions, technical requirements, test methods, inspection rules, marking, packaging, transportation and storage of chemical vapor deposition (CVD) epitaxial equipment (hereinafter referred to as "epitaxial equipment") for preparing silicon carbide semiconductor materials. The requirements include unified technical parameters and evaluation methods for the reaction chamber system, temperature control system, heating system, vacuum system, and processing (silicon carbide epitaxial wafer) quality indicators of epitaxial equipment. By controlling key parameters such as reliability, processing efficiency, temperature, pressure and flow, the accuracy and safety of the equipment are guaranteed.
T/ZJATA 0017-2023 history
2023T/ZJATA 0017-2023 Chemical vapor deposition (CVD) epitaxy equipment for preparing silicon carbide semiconductor materials