T/IAWBS 003-2017
Determination of Carrier Concentration in SiC Epitaxial Layer_Mercury Probe Capacitance-Voltage Method (English Version)
- Standard No.
- T/IAWBS 003-2017
- Language
- Chinese, Available in English version
- Release Date
- 2017
- Published By
- Group Standards of the People's Republic of China
- Latest
- T/IAWBS 003-2017
- Scope
- This standard specifies the method for measuring the carrier concentration of silicon carbide (4H-SiC) epitaxial layer - mercury probe capacitance-voltage method. This standard is applicable to the measurement of carrier concentration of a single-layer homogeneous silicon carbide epitaxial layer. It requires that the measured thickness of the silicon carbide epitaxial layer must be greater than the width of the depletion layer under the test bias. The carrier concentration measurement range is: 1×1014 cm-3 ~ 5×1017 cm-3. This standard can also be applied to the measurement of carrier concentration on silicon carbide substrates.
T/IAWBS 003-2017 history
- 2017 T/IAWBS 003-2017 Determination of Carrier Concentration in SiC Epitaxial Layer_Mercury Probe Capacitance-Voltage Method
