T/IAWBS 002-2017
Test method for surface defect of silicon carbide epitaxial wafer (English Version)

Standard No.

T/IAWBS 002-2017

Language

Chinese, Available in English version

Release Date

2017

Published By

Group Standards of the People's Republic of China

Latest

T/IAWBS 002-2017

Scope

This standard specifies the non-destructive optical measurement method of surface defects of silicon carbide epitaxial wafers for power devices. This standard applies to homogeneous silicon carbide epitaxial layers exceeding (including) 2 microns thick.

T/IAWBS 002-2017 history

• 2017 T/IAWBS 002-2017 Test method for surface defect of silicon carbide epitaxial wafer