T/CASAS 004.1-2018
The Terminology for Defects in both 4H-SiC Substrates and Epilayers (English Version)

Standard No.

T/CASAS 004.1-2018

Language

Chinese, Available in English version

Release Date

2018

Published By

Group Standards of the People's Republic of China

Latest

T/CASAS 004.1-2018

Scope

Since the shapes, types, and causes of 4H-SiC defects, especially 4H-SiC epitaxial defects, are different or completely different from other common semiconductor defects due to different epitaxial growth modes, and there are currently no applicable national standards and industry standards, so , in order to standardize the terms and definitions of 4H-SiC defects, this standard is specially formulated.

T/CASAS 004.1-2018 history

• 2018 T/CASAS 004.1-2018 The Terminology for Defects in both 4H-SiC Substrates and Epilayers