Silicon carbide material is the third generation of new semiconductor materials developed in the past decade, following the first generation of semiconductor materials (represented by silicon) and the second generation of semiconductor materials (represented by gallium arsenide and indium phosphide). Its main application areas include LED solid-state lighting, power electronics and microwave radio frequency devices. This material has excellent properties such as wide bandgap, high drift speed, high breakdown electric field, high thermal conductivity, and radiation resistance. It is widely used in electronic applications such as high temperature, high pressure, high frequency, and high power, as well as in extreme extremes such as aerospace, military industry, and strong radiation fields. Environmental applications have irreplaceable advantages. Silicon carbide material has become the forefront and commanding heights of the global semiconductor industry. With the development of the silicon carbide industry, the refinement of the division of labor in the industrial chain is an inevitable trend. There will be a large number of manufacturers that only specialize in processing silicon carbide wafers, and silicon carbide single crystals will be traded separately. , so it is necessary to formulate separate silicon carbide single crystal standards.