GB/T 40110-2021 Surface chemical analysis—Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy (English Version)
This document describes the TXRF method for measuring the atomic surface density of surface element contamination on chemically mechanically polished or epitaxially grown silicon wafers. This document applies to the following situations:
——- Elements with atomic numbers from 16 (S) to 92 (U);
——— Contaminating elements with atomic surface densities between 1×1010a/cm2 and 1×1014a/cm2; tomstoms ———Polluting elements with an atomic surface density between 5×108a/cm2 and 5×1012atomst/cm2 obtained by the VPD (vapor phase decomposition) sample preparation method (see 3.oms4).
GB/T 40110-2021 Referenced Document
ISO 14644-1 Cleanrooms and associated controlled environments - Part 1: Classification of air cleanliness by particle concentration (includes Redline Version)
GB/T 40110-2021 history
2021GB/T 40110-2021 Surface chemical analysis—Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy