T/IAWBS 010-2019
Detection method for measuring the surface Detection method for measuring the surface quality and micropipe densityof polished monocrystalline silicon carbide wafers-Laser Scattering Method (English Version)
- Standard No.
- T/IAWBS 010-2019
- Language
- Chinese, Available in English version
- Release Date
- 2019
- Published By
- Group Standards of the People's Republic of China
- Latest
- T/IAWBS 010-2019
- Scope
- With the development of the SiC industry, obtaining SiC single crystal polished wafers with perfect surfaces has become one of the key links in the application of silicon carbide materials. In order to manufacture high-performance SiC power electronic devices, the wafer requires a complete crystal lattice, a damage-free and ultra-smooth surface with extremely flatness, and no crystal orientation deviation. Because even small defects on the surface will destroy the surface properties of the crystal material, even cause changes in the crystal structure, and affect the electrical performance of the device. The current testing method is mainly based on visual observation under diffuse reflection conditions. However, the surface of SiC single crystal polished wafers has defects such as particles, scratches, and pits. Relying on human visual inspection will cause large errors. This standard uses advanced instruments to objectively characterize scratches, particles, pits and other defects on the surface of SiC single crystal polished wafers.
T/IAWBS 010-2019 history
- 2019 T/IAWBS 010-2019 Detection method for measuring the surface Detection method for measuring the surface quality and micropipe densityof polished monocrystalline silicon carbide wafers-Laser Scattering Method
