T/IAWBS 012-2019 (English Version) PDF

Scope: As a representative of the third generation of new high-power semiconductor materials, silicon carbide devices have received great expectations and attention from the industry. The rapid popularity in the market has put forward higher requirements for the quality of silicon carbide polishing wafers, and the call for high quality is getting louder. Therefore, it is important to quickly detect the microtube density of single crystal silicon carbide polished wafers and surface defects such as scratches and particles on the use surface, and accurately count the number and distribution of various defects, to improve the quality of silicon carbide polished wafers and increase the production capacity of silicon carbide polished wafers. The necessary means to determine an accurate and reliable silicon carbide single wafer microtube density and surface quality detection method and standardized detection mechanism are of great significance to the unified control of product surface quality during the development, production and application of silicon carbide single wafers.

T/IAWBS 012-2019 history

2019 T/IAWBS 012-2019 Test Method for Surface Quality and Micropipe?Density?of Silicon Carbide?Single Crystal?Polishing Wafers——Confocal and Differential Interferometry Optics