IEC 63275-2:2022
Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operatio

Standard No.
IEC 63275-2:2022
Release Date
2022
Published By
International Electrotechnical Commission (IEC)
Latest
IEC 63275-2:2022

IEC 63275-2:2022 history

  • 2022 IEC 63275-2:2022 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operatio
Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operatio



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