IEC 63275-2:2022 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operatio
2022IEC 63275-2:2022 Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operatio