T/CASAS 009-2019
Determination of Trace Impurities Concentration and Distribution in Semi-insulating SiC Materials by Secondary Ion Mass Spectrometry (English Version)
- Standard No.
- T/CASAS 009-2019
- Language
- Chinese, Available in English version
- Release Date
- 2019
- Published By
- Group Standards of the People's Republic of China
- Latest
- T/CASAS 009-2019
- Scope
- High-precision characterization of the concentration and distribution of trace impurity elements in semiconductor materials is an important parameter that affects the performance of products at different stages of the industrial chain (such as substrates, epitaxy, chips, devices). Secondary ion mass spectrometer is the most commonly used and most accurate equipment for detecting the concentration and distribution of trace impurity elements in materials. At present, my country's standard for high-precision detection of trace impurity concentration and distribution in third-generation semiconductor materials using secondary ion mass spectrometry is a blank field. Therefore, the formulation of this standard has great significance for the evaluation of characteristic parameters and industrial applications of third-generation semiconductor materials. Strong positive effect.
T/CASAS 009-2019 history
- 2019 T/CASAS 009-2019 Determination of Trace Impurities Concentration and Distribution in Semi-insulating SiC Materials by Secondary Ion Mass Spectrometry
