This standard specifies the method for testing the oxygen content in silicon materials using inert gas fusion and infrared technology. This standard is suitable for testing the oxygen content in silicon single crystal and polycrystalline silicon with different conductivity types and different resistivity ranges. The test range is 2.5×1 510 cm-3 (0.05ppma) ~ 2.5×1018cm-3 (50ppma). Note: The oxygen content in silicon materials is measured in atoms per cubic centimeter.
GB/T 38976-2020 Referenced Document
GB/T 14264 Semiconductor materials-Terms and definitions
GB/T 1557 Test method for determining interstitial oxygen content in silicon by infrared absorption
GB/T 38976-2020 history
2020GB/T 38976-2020 Test method for the oxygen concentration in silicon materials—Inert gas fusion infrared detection method