ASTM F398-92(1997) PDF

Scope: 1.1 This test method covers determination of the wavenumber of the plasma resonance minimum in the infrared reflectance of a doped semiconductor specimen, from which the majority carrier concentration can be obtained. 1.2 This test method of determination of the wavenumber minimum is nondestructive and contactless. It is applicable to nand p-type silicon, nand p-type gallium arsenide, and n-type germanium. 1.3 This test method gives a relative measurement in that the relation between the wavenumber of the plasma resonance minimum and the majority carrier concentration is empirical. Such relations have been established for the several cases summarized in Annex A1. These relations are based upon determinations of the plasma resonance minimum by the procedure of this method and determinations of the Hall coefficient according to Test Methods F 76 (Section 2) or resistivity according to Test Methods F 43 or Test Method F 84 (Section 2) as appropriate. 1.4 These relations have been established over a majority carrier concentration range from 1.5 3 10 18 to 1.5 3 1021 cm −3 for n-type silicon, from 3 3 10 18 to 5 3 1020 for p-type silicon, from 3 3 1018 to 7 3 10 19 for n-type germanium, from 1.5 3 10 17 to 1 3 1019 for n-type gallium arsenide, and from

ASTM F398-92(1997) Referenced Document

ASTM E275 Standard Practice for Describing and Measuring Performance of Ultraviolet, Visible, and Near-Infrared Spectrophotometers
ASTM F42 Standard Test Methods for Conductivity Type of Extrinsic Semiconducting Materials
ASTM F43
ASTM F76 Standard Test Methods for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Single-Crystal Semiconductors
ASTM F84

1970 ASTM F398-92(2002)
1997 ASTM F398-92(1997) Standard Test Method for Majority Carrier Concentration in Semiconductors by Measurement of Wavenumber or Wavelength of the Plasma Resonance Minimum