T/CASAS 004.2-2018
The Metallographs Collection for Defects in both 4H-SiC Substrates and Epilayers (English Version)

Standard No.

T/CASAS 004.2-2018

Language

Chinese, Available in English version

Release Date

2018

Published By

Group Standards of the People's Republic of China

Latest

T/CASAS 004.2-2018

Scope

Since the shapes, types, and causes of 4H-SiC defects, especially 4H-SiC epitaxial defects, are different or completely different from other common semiconductor defects due to different epitaxial growth modes, and there are currently no applicable national standards and industry standards, so , in order to standardize the terms and definitions of 4H-SiC defects, this standard is specially formulated. This standard is formulated and published by the Standardization Committee of the Third Generation Semiconductor Industry Technology Innovation Strategic Alliance (CASAS). The copyright belongs to CASA and may not be copied without permission from CASA. Other organizations that use the technical content of this standard to develop standards must obtain permission from CASA; any unit Or individuals who quote the content of this standard must indicate the standard number of this standard.

T/CASAS 004.2-2018 history

• 2018 T/CASAS 004.2-2018 The Metallographs Collection for Defects in both 4H-SiC Substrates and Epilayers