GB/T 41765-2022
Test method for dislocation density of monocrystalline silicon carbide (English Version)

Standard No.

GB/T 41765-2022

Language

Chinese, Available in English version

Release Date

2022

Published By

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China

Latest

GB/T 41765-2022

Scope

This document specifies a test method for the dislocation density of silicon carbide single crystals. This document is applicable to the test of the dislocation density of silicon carbide single crystal whose crystal plane deviates from the {0001} plane and is 0°~8° to the <1120> direction.

GB/T 41765-2022 Referenced Document

• GB/T 14264 Semiconductor materials-Terms and definitions
• GB/T 30656 Silicon carbide single crystal polished wafer*， 2023-03-17 Update

GB/T 41765-2022 history

• 2022 GB/T 41765-2022 Test method for dislocation density of monocrystalline silicon carbide