PD IEC TS 63202-4:2022 Photovoltaic cells - Measurement of light and elevated temperature induced degradation of crystalline silicon photovoltaic cells
1 Scope
This part of IEC 63202
describes procedures for measuring the light and elevated temperature induced degradation
(LETID) of crystalline silicon
photovoltaic (PV) cells in simulated sunlight.
The requirements for measuring initial light induced degradation (LID) of crystalline
silicon PV cells are covered by IEC 63202‑1, where LID degradation risk of PV cells under moderate temperature and initial durations
within termination criteria of
20 kWh·m −2 are evaluated.
Energy yield of PV modules is significantly affected by the inherent LETID performance
of the PV cells, which are used in it.
This LETID performance includes LID and other degradation mechanisms. The procedures
described in this document are to evaluate the
degradation behaviour of PV cells under elevated temperature and longer duration of
light irradiation. The degradation rate, maximum
degradation ratio and possible regeneration are determined by comparing the cell maximum
power, P max , at Standard Test Conditions (STC) during the light irradiation process with respect
to the initial P max . A P max degradation profile with respect to cumulative irradiation is presented, which helps
cell manufacturer to judge whether the
cells are prone to LETID before being assembled into modules.
Different from some other standards which separate boron-oxygen induced LID from LETID
or are limited to charge carrier
injection induced degradation [1] 1 , the overall degradation under light irradiation at elevated temperature is included
in the procedures described in this document. The overall degradatio...
PD IEC TS 63202-4:2022 history
2022PD IEC TS 63202-4:2022 Photovoltaic cells - Measurement of light and elevated temperature induced degradation of crystalline silicon photovoltaic cells