T/NXCL 30-2024
300 mm low oxygen content single crystaline Czochralski silicon (English Version)
- Standard No.
- T/NXCL 30-2024
- Language
- Chinese, Available in English version
- Release Date
- 2024
- Published By
- Group Standards of the People's Republic of China
- Latest
- T/NXCL 30-2024
- Scope
- This document stipulates the technical requirements, test methods, inspection specifications, marking, packaging, transportation, storage, quality certificate and quality commitment of 300mm low oxygen content Czochralski silicon single crystal. This document applies to low-oxygen content silicon single crystals with a diameter of 300mm prepared by the Czochralski method using electronic-grade polysilicon as the main raw material. The products are mainly used as substrates for power devices such as insulated gate bipolar transistors (IGBTs).
T/NXCL 30-2024 history
- 2024 T/NXCL 30-2024 300 mm low oxygen content single crystaline Czochralski silicon
