GB/T 42271-2022
Test method for resistivity of semi-insulating monocrystalline silicon carbide by contactless measurement (English Version)

Standard No.
GB/T 42271-2022
Language
Chinese, Available in English version
Release Date
2022
Published By
General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
Latest
GB/T 42271-2022
Scope
This document describes a method for the non-contact measurement of resistivity of semi-insulating silicon carbide single crystals. This document applies to the measurement of semi-insulating silicon carbide single wafers with resistivity ranging from 1×105 Ω·cm to 1×1012 Ω·cm.

GB/T 42271-2022 Referenced Document

  • GB/T 14264 Semiconductor materials-Terms and definitions
  • GB/T 30656 Silicon carbide single crystal polished wafer*2023-03-17 Update

GB/T 42271-2022 history

  • 2022 GB/T 42271-2022 Test method for resistivity of semi-insulating monocrystalline silicon carbide by contactless measurement
Test method for resistivity of semi-insulating monocrystalline silicon carbide by contactless measurement



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