General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
Latest
GB/T 42271-2022
Scope
This document describes a method for the non-contact measurement of resistivity of semi-insulating silicon carbide single crystals. This document applies to the measurement of semi-insulating silicon carbide single wafers with resistivity ranging from 1×105 Ω·cm to 1×1012 Ω·cm.
GB/T 42271-2022 Referenced Document
GB/T 14264 Semiconductor materials-Terms and definitions
GB/T 30656 Silicon carbide single crystal polished wafer*, 2023-03-17 Update
GB/T 42271-2022 history
2022GB/T 42271-2022 Test method for resistivity of semi-insulating monocrystalline silicon carbide by contactless measurement