SJ 20636-1997
Test method for oxygen and carbon contents of large diameter thin silicon wafer in microzone for use in IC (English Version)
- Standard No.
- SJ 20636-1997
- Language
- Chinese, Available in English version
- Release Date
- 1997
- Published By
- Professional Standard - Electron
- Latest
- SJ 20636-1997
- Scope
- This standard specifies the method for measuring the radial distribution of interstitial oxygen content in micro-areas and the substitutional carbon content in silicon wafers with a thickness of 0.3 to 2.0 mm. This standard is applicable to the determination of the radial distribution of interstitial oxygen content and micro-areas of substituted carbon content in silicon wafers with room temperature resistivity greater than 0.1Ω.cm. Measuring range. For the interstitial oxygen content is 3.0×10^(16)at. cm^(-3) to the maximum solid solubility of interstitial oxygen in silicon; for the substituted carbon content is 5.0×10^(15)at. cm^(-3) to the maximum solid solubility of substituted carbon in silicon.
SJ 20636-1997 history
- 1997 SJ 20636-1997 Test method for oxygen and carbon contents of large diameter thin silicon wafer in microzone for use in IC
