SJ 2757-1987
Method of measurement by infra-red reflection for charge carrier concentraiton of heavily doped semiconductors (English Version)

Standard No.

SJ 2757-1987

Language

Chinese, Available in English version

Release Date

1987

Published By

Professional Standard - Electron

Latest

SJ 2757-1987

Scope

This standard is applicable to measuring the carrier concentration of heavily doped semiconductor bulk materials, as well as measuring the carrier concentration of epitaxial layers, buried layers and diffusion layers.

SJ 2757-1987 history

• 1987 SJ 2757-1987 Method of measurement by infra-red reflection for charge carrier concentraiton of heavily doped semiconductors