This standard specifies the test method for rapid screening of transistor thermal parameters. Applicable to: 1.1 Eliminate transistors prone to early failure and improve the quality and reliability of product batches. 1.2 Test the thermal parameters I|(CEO) (or I|(CBO))v|(BE) and h|(FE) before and after the test tube is subjected to a certain pulse power, and predict it by its change amount or change rate Thermal recessiveness of the test tube. 1.3 Simulate the surge voltage, surge current and other conditions that may occur when the test tube is actually used and apply stress. To assess the ability of the test tube to withstand impact. 1.4 Estimate the size and range of the thermal resistance of the test tube.
SJ/T 10415-1993 history
1993SJ/T 10415-1993 Rapid screening test methods for thermal sensitive parameter of transistor