SJ/T 10627-1995
Test methods for oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction (English Version)
- Standard No.
- SJ/T 10627-1995
- Language
- Chinese, Available in English version
- Release Date
- 1995
- Published By
- Professional Standard - Electron
- Status
- 2010-02
- Latest
- SJ/T 10627-1995
- Scope
- This standard applies to room temperature resistivity greater than 0.1Ω. cm N-type or P-type Czochralski silicon wafer, its thermal cycle can be single temperature or dual temperature.
SJ/T 10627-1995 history
- 1995 SJ/T 10627-1995 Test methods for oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction
