SJ/T 10482-1994
Test method for characterizing semiconductor deep levels by transient capacitance techniques (English Version)
- Standard No.
- SJ/T 10482-1994
- Language
- Chinese, Available in English version
- Release Date
- 1994
- Published By
- Professional Standard - Electron
- Latest
- SJ/T 10482-1994
- Scope
- This standard specifies the test method for measuring deep energy levels in semiconductor materials using the deep level transient spectroscopy (DLTS) method in transient capacitance technology. This standard is suitable for measuring the deep energy levels produced by impurities and defects in the semiconductor bandgap in semiconductor materials such as silicon and gallium arsenide. By this method, parameters such as activation energy, concentration, and pre-exponential factor A of the deep energy level can be obtained. This standard applies to deep energy levels associated with generating exponential capacitive transients.
SJ/T 10482-1994 history
- 1994 SJ/T 10482-1994 Test method for characterizing semiconductor deep levels by transient capacitance techniques
