SJ 3244.4-1989
Methods of measurement for profile distribution of carrier concentration of Gallium arsenide and Indium phosphide materials--Electrochemical voltage capacitance method (English Version)
- Standard No.
- SJ 3244.4-1989
- Language
- Chinese, Available in English version
- Release Date
- 1989
- Published By
- Professional Standard - Electron
- Status
- 2010-02
- Latest
- SJ 3244.4-1989
- Scope
- 1.1 This standard specifies the principles, instrument and electrolyte requirements, measurement procedures, and calculation of measurement results for electrochemical voltage capacitance method measurement. 1.2 This standard applies to n-type and P-type gallium arsenide and indium phosphide with a carrier concentration of 10^(14)~10(19)cm^(-3). It also applies to aluminum gallium arsenide and gallium indium arsenide phosphide. Measurement of material carrier concentration profile distribution.
SJ 3244.4-1989 history
- 1989 SJ 3244.4-1989 Methods of measurement for profile distribution of carrier concentration of Gallium arsenide and Indium phosphide materials--Electrochemical voltage capacitance method
