SJ 3248-1989
Methods for measuring carrier concentration of readded Gallium arsenide and Indium phosphide by infra-red reflection (English Version)
- Standard No.
- SJ 3248-1989
- Language
- Chinese, Available in English version
- Release Date
- 1989
- Published By
- Professional Standard - Electron
- Latest
- SJ 3248-1989
- Scope
- This standard specifies the measurement principle, instrumentation, sample preparation, and measurement procedures for measuring the carrier concentration of heavily doped gallium arsenide and indium phosphide using infrared reflection method. Result calculation and accuracy, etc. This standard is suitable for measuring the carrier concentration of heavily doped gallium arsenide and indium phosphide single crystals, and is also suitable for measuring the carrier concentration of epitaxial layers.
SJ 3248-1989 history
- 1989 SJ 3248-1989 Methods for measuring carrier concentration of readded Gallium arsenide and Indium phosphide by infra-red reflection
