SJ 3244.2-1989
Methods of measurement for crystal lattice mismatch between substrate of Gallium arsenide and Indium phosphide and extended layer of heterojunction (English Version)

Standard No.

SJ 3244.2-1989

Language

Chinese, Available in English version

Release Date

1989

Published By

Professional Standard - Electron

Status

Withdraw 2010-02

Latest

SJ 3244.2-1989

Scope

This standard specifies the measurement principles, procedures, and calculation methods for the lattice mismatch between the heterojunction epitaxial layer and the substrate. This standard is applicable to the following range: the crystal orientation deviation of the surface of the epitaxial layer is less than 1.5^(·). The total thickness of the multi-layer epitaxial layer is not greater than 10 μm.

SJ 3244.2-1989 history

• 1989 SJ 3244.2-1989 Methods of measurement for crystal lattice mismatch between substrate of Gallium arsenide and Indium phosphide and extended layer of heterojunction