SJ 3247-1989
Methods of measurement for extended-layer thickness of same-type Gallium arsenide by infra-red interference (English Version)
- Standard No.
- SJ 3247-1989
- Language
- Chinese, Available in English version
- Release Date
- 1989
- Published By
- Professional Standard - Electron
- Status
- 2010-02
- Latest
- SJ 3247-1989
- Scope
- This standard specifies the principles, instruments and equipment, sample preparation and measurement steps, result calculation and accuracy for infrared interferometry measurement of the thickness of the gallium arsenide epitaxial layer of the same type as the substrate. This standard is applicable to the measurement of the thickness of the gallium arsenide epitaxial layer of the same type as the substrate. The room temperature resistivity of the substrate and the epitaxial layer should be less than 0.02Ω cm and greater than 0.1ΩZ·cm respectively, and the measurable thickness is greater than 2 μm.
SJ 3247-1989 history
- 1989 SJ 3247-1989 Methods of measurement for extended-layer thickness of same-type Gallium arsenide by infra-red interference
