SJ 3244.1-1989
Methods of measurement for hall mobility and carrier concentration of Gallium arsenide and Indium phosphide (English Version)
- Standard No.
- SJ 3244.1-1989
- Language
- Chinese, Available in English version
- Release Date
- 1989
- Published By
- Professional Standard - Electron
- Status
- 2010-02
- Latest
- SJ 3244.1-1989
- Scope
- This standard specifies the measurement principles, measurement procedures, calculation of test results, and accuracy of Hall mobility and carrier concentration of gallium arsenide and indium phosphide materials. This standard is applicable to the measurement of Hall mobility and carrier concentration of gallium arsenide and indium phosphide materials (including gallium arsenide epitaxial layers grown on semi-insulating substrates) whose resistance is less than 10^(4)Ωcm. It is also suitable for the measurement of other semiconductor materials. Since Hall mobility is calculated from Hall coefficient and resistivity, this standard is applicable to a single measurement of these two parameters.
SJ 3244.1-1989 history
- 1989 SJ 3244.1-1989 Methods of measurement for hall mobility and carrier concentration of Gallium arsenide and Indium phosphide
