BS IEC 63068-2:2019
Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Test method for defects using optical inspection

Standard No.

BS IEC 63068-2:2019

Release Date

2019

Published By

British Standards Institution (BSI)

Latest

BS IEC 63068-2:2019

Scope

What is BS IEC 63068 ‑ 2 - Silicon carbide homoepitaxial (SiC) wafer about?    BS IEC 63068 is a series of international standards for semiconductor devices that specifies the defects in silicon carbide homoepitaxial (SiC) wafer used in semiconductor devices.    BS IEC 63068 ‑ 2 is the second part of the series of documents that provides definitions and guidance in the use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers.    BS IEC 63068

BS IEC 63068-2:2019 history

• 2019 BS IEC 63068-2:2019 Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Test method for defects using optical inspection