CNS 8106-1981
Method for Measuring MOSFET Saturated Threshold Voltage (English Version)

Standard No.

CNS 8106-1981

Language

Chinese, Available in English version

Release Date

1981

Published By

Taiwan Provincial Standard of the People's Republic of China

Latest

CNS 8106-1981

Scope

1.1 This standard specifies the measurement method for the saturation critical voltage of metal oxide semiconductor field effect transistors (Note 1: hereinafter referred to as MOSFET) under low frequency or DC conditions. The dc conductance method used in this standard is suitable for the MOSEFT linear operating area. Its typical drain voltage Vd is about 10V. The measurement method for its linear critical voltage is specified.

CNS 8106-1981 history

• 1981 CNS 8106-1981 Method for Measuring MOSFET Saturated Threshold Voltage