Taiwan Provincial Standard of the People's Republic of China
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CNS 8104-1981
Scope
1.1 This standard specifies the measurement method of the linear critical voltage of metal oxide semiconductor field effect transistors (Note 1, hereinafter referred to as MOSFET) under low frequency or DC conditions. The dc conductance method used in this standard is suitable for MOSEFT linear operating area. Its typical drain voltage Vd is about 0.1V. The measurement method of its saturation critical voltage is specified.
CNS 8104-1981 history
1981CNS 8104-1981 Method for Measuring MOSFET Linear Threshold Voltage