JEDEC JESD24-12-2004
Thermal Impedance Measurement for Insulated Gate Bipolar Transistors (Delta VCE(on) Method) (This is an alternative method to JEDEC Standard No. 24-6)

Standard No.

JEDEC JESD24-12-2004

Release Date

2004

Published By

(U.S.) Joint Electron Device Engineering Council Soild State Technology Association

Scope

The purpose of this test method is to measure the thermal impedance of the IGBT (Insulated Gate Bipolar Transistor) under the specified conditions of applied voltage, current and pulse duration. The temperature sensitivity of the collector-emitter on voltage, VCE(on), is used as the junction temperature indicator. This is an alternative method to JEDEC Standard No. 24-6.